Phase Change Memory As A Secure Main Memory Project Report

Introduction to phase change memory:

Phase change memory technology is used for writing of the memory systems. This appears to be good technology for the design future computer memories. It has advantages when compared to that of normal DRAMs. Today’s phase change memory technology allows the memory to be written up to 107 0r 109 times and research is going on to make it suitable for the conventional technologies. This paper discusses the design of phase change main memories and it’s working.

Brief into Design and Working of phase change main memory:

When compared to that of normal DRAMs it is advantageous in terms of static energy com consumption and integration scalability. Over exceeding the limit of writing can impair its proper functioning. In 1970s the phase change memory was designed using a 256 bit semiconductor and it a non volatile memory which allows a phase change in materials. RAMs and DRAMs are designed using NAND type ash. Whereas the phase change memory storage element consists of two metal electrodes separated by resistive heater and chalcogenide and a transistor which is used for controlling the access. By reducing the wear leveling techniques the more no writes can be achieves. By bit alterable memory we change the written information from zero to one or one to zero without the use of erase step which is used in flash memories. Like DRAMs phase change memories are non volatile memories and exhibited excellent retention results when compared to DRAM.

The bandwidth and latency which supports write speed is a not upto the speed of DRAM. Certain security measures are to be taken for secured transfer of data in phase change based memories. Invisible PA to PCMA translation so that he physical address of the memories is not visible. By employing PA to PCMA translations 4K or 16k address entries can transfer into a single entry. 

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