In our project non volatile memory technology symposium (OUM); we presented solution for the limitations facing by the modern day digital memory devices. Ovonics Unified Memory (OUM) is the most advanced technology which had unique abilities in proving High endurance, low power, nonvolatile RAM with high speed facilities.
Non Volatile Memory Technology Symposium
OUM is a non-volatile memory which stores memory by using chalcogenide materials. This material comes under VI elements of the modern periodic elements. It is an alloy consists of germanium, antimony, and tellurium used for the storage of data in memory devices.
Next generation memory devices:
Apart from many more memory technologies the semi conductor technologies are gaining enormous attention in providing reduced cost/bit storage devices. The mechanism in these OUM devices is a reversible structural phase-change mechanism from the amorphous phase to a crystalline phase in a thin-film chalcogenide alloy material. OUM technology implements the conventional CMOS process to form the thin-film memory element.
Data writing mechanism:
Primarily the alloy is heated up to its melting point and rapidly cooled for getting amorphous substance and to get crystalline substrate it get heated below the melting point and make to settle down the crystalline particles for 50ns, And then programmed the programming is done in OUM devices by electrically Altering the structure i.e. amorphous or crystalline, of a small volume of chalcogenide alloy. The memory state of the cell is determined by reading the resistance.